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Freescale Semiconductor Technical Data
Document Number: MRF6VP121KH Rev. 2, 12/2009
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. * Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty Cycle = 10% Power Gain -- 20 dB Drain Efficiency -- 56% * Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power Features * Characterized with Series Equivalent Large-Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Designed for Push-Pull Operation * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP121KHR6 MRF6VP121KHSR6
965-1215 MHz, 1000 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 375D-05, STYLE 1 NI-1230 MRF6VP121KHR6
CASE 375E-04, STYLE 1 NI-1230S MRF6VP121KHSR6 PARTS ARE PUSH-PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value -0.5, +110 -6.0, +10 -65 to +150 150 200 Unit Vdc Vdc C C C
(c) Freescale Semiconductor, Inc., 2009. All rights reserved.
MRF6VP121KHR6 MRF6VP121KHSR6 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 67C, 1000 W Pulsed, 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ = 150 mA Case Temperature 62C, Mode-S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA Symbol ZJC 0.02 0.07 Value (1,2) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1B (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(3)
Symbol
Min
Typ
Max
Unit
Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 165 mA) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (3) (VDS = 10 Vdc, ID = 1000 Adc) Gate Quiescent Voltage (4) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain-Source On-Voltage (3) (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (3) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
IGSS V(BR)DSS IDSS IDSS
-- 110 -- --
-- -- -- --
10 -- 10 100
Adc Vdc Adc Adc
VGS(th) VGS(Q) VDS(on)
0.9 1.5 --
1.6 2.2 0.15
2.4 3 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
1.27 86.7 539
-- -- --
pF pF pF
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL 19 54 -- 20 56 -23 22 -- -9 dB % dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Each side of device measured separately. 4. Measurement made with device in push-pull configuration. (continued)
MRF6VP121KHR6 MRF6VP121KHSR6 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Pulsed RF Performance -- 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 785 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL -- -- -- 18.9 57.8 -16.6 -- -- -- dB % dB
Pulsed RF Performance -- 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Mode-S Pulse Train, 80 Pulses of 32 sec On, 18 sec Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle Power Gain Drain Efficiency Burst Droop Gps D BDrp -- -- -- 19.8 59.0 0.21 -- -- -- dB % dB
Pulsed RF Performance -- 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Drain Efficiency Input Return Loss Gps D IRL -- -- -- 21.4 56.3 -25.3 -- -- -- dB % dB
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 3
VBIAS
+ C1 C2 C3 C4 L1 BALUN 1 R1 Z11 Z3 Z5 Z7 Z9 C13 Z13 Z15 Z17 Z19 Z21 C17 C18 C21 C22
+ C23
+ C24
VSUPPLY
RF INPUT Z1
RF Z2 C10 Z4 C11 R2 C14 VBIAS + C5 C6 C7 C8 + C25 C26 C27 + C28 VSUPPLY L2 Z6 Z8 C12 Z10 DUT C15 C16 Z23 OUTPUT
C9
Z12
Z14
Z16
Z18
Z20 Z22 C19 C20 BALUN 2
Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12
0.140 x 0.083 0.300 x 0.083 0.746 x 0.220 0.075 x 0.631 0.329 x 0.631 0.326 x 0.631 0.240 x 0.631
Z13, Z14 Z15, Z16 Z17, Z18 Z19, Z20 Z21, Z22 Z23 PCB
0.143 x 0.631 0.135 x 0.631 0.102 x 0.632 0.130 x 0.631 0.736 x 0.215 0.410 x 0.083 Arlon CuClad 250GX-0300-55-22, 0.030, r = 2.55
Figure 2. MRF6VP121KHR6(HSR6) Test Circuit Schematic
Table 5. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values
Part Balun 1, 2 C1, C5 C2, C6 C3, C7 C4, C8, C10, C11, C17, C18, C19, C20, C21, C25 C9 C12, C16 C13, C14, C15 C22, C26 C23, C24, C27, C28 L1, L2 R1, R2 Balun Anaren 22 F, 25 V Tantalum Capacitors 2.2 F, 50 V Chip Capacitors 0.22 F, 100 V Chip Capacitors 36 pF Chip Capacitors 1.0 pF Chip Capacitor 0.8-8.0 pF Variable Capacitors 5.1 pF Chip Capacitors 0.022 F, 100 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors Inductors 3 Turn 1000 , 1/4 W Chip Resistors Description 3A412 TPSD226M025R C1825C225J5RAC C1210C224K1RAC ATC100B360JT500XT ATC100B1R0CT500XT 27291SL ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26-RH GA3094-AL CRCW12061001FKEA Manufacturer Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC Kemet Multicomp Coilcraft Vishay
MRF6VP121KHR6 MRF6VP121KHSR6 4 RF Device Data Freescale Semiconductor
C24
C1 C3 C2 C4 BALUN 1
MRF6VP121KH Rev. 2 C22 C21
C23
BALUN 2
R1 C12
C13
L1
C10 C11
C15 CUT OUT AREA
C16
C17 C18 C19 C20
C9
R2 C8 C6 C7
C14
L2
C25
C26
C5
C27
Figure 3. MRF6VP121KHR6(HSR6) Test Circuit Component Layout
C28
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
1000 Ciss Gps, POWER GAIN (dB) C, CAPACITANCE (pF) Coss 100 22 21 20 19 18 17 1 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 16 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PULSED VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 60 50 40 30 20 10 0 10000 D, DRAIN EFFICIENCY (%) 45 Gps
10
Crss
Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc
D
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage
22 Ideal 21.5 Gps, POWER GAIN (dB)
Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power
25 24 23 IDQ = 6000 mA Gps, POWER GAIN (dB)
21 P1dB = 1065 W (60.3 dBm) 20.5 20 19.5 19 18.5 18 500 P3dB = 1182 W (60.7 dBm) VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 600 700 800 900 1000 1100
22 21 20 19 18 17 16 1
3000 mA 1500 mA 750 mA 375 mA 150 mA 10 VDD = 50 Vdc f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 100 1000 10000
Actual 1200 1300
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus Output Power
23 22 Gps, POWER GAIN (dB) 21 20 19 18 VDD = 30 V 17 16 0 200 400 600 800 1000 1200 1400 Pout, OUTPUT POWER (WATTS) PULSED 40 20 35 V 40 V 45 V 50 V IDQ = 150 mA, f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 65
Figure 7. Pulsed Power Gain versus Output Power
Pout, OUTPUT POWER (dBm)
60
55 TC = -30_C 50 25_C
45
85_C
VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 30 35 40
25
Pin, INPUT POWER (dBm) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Output Power versus Input Power
MRF6VP121KHR6 MRF6VP121KHSR6 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
23 22 Gps, POWER GAIN (dB) 21 20 19 18 17 85_C 16 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PULSED 0 10000 TC = -30_C 25_C D VDD = 50 Vdc IDQ = 150 mA f = 1030 MHz Pulse Width = 128 sec Duty Cycle = 10% 70 60 50 40 30 20 10 D, DRAIN EFFICIENCY (%) 170 190 Gps
Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power
109 108 MTTF (HOURS) 107 MTTF (HOURS) 90 110 130 150 170 190 210 230 250 109 108 107
106 105
106 105
104 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 128 sec, Duty Cycle = 10%, and D = 56%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
104 90 110 130 150 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Mode-S Pulse Train, Pulse Width = 32 sec, Duty Cycle = 6.4%, and D = 59%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 11. MTTF versus Junction Temperature 128 msec, 10% Duty Cycle
Figure 12. MTTF versus Junction Temperature Mode-S
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 7
Zo = 5
f = 1030 MHz Zload
f = 1030 MHz
Zsource
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 1030 Zsource W 3.93 + j0.09 Zload W 1.54 + j1.42
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 13. Series Equivalent Source and Load Impedance
MRF6VP121KHR6 MRF6VP121KHSR6 8 RF Device Data Freescale Semiconductor
C26
C1 C3 C2 C4 BALUN 1 C9 C10 C11 C12 C13 C14
MRF6VP121KH Rev. 2 C24 C23 L1 R1
C25
BALUN 2
C17 C18
C19 C20 C21 C22
CUT OUT AREA
C15 C16 L2
R2 C8 C6 C7
C29
C5
Figure 14. MRF6VP121KHR6(HSR6) Test Circuit Component Layout -- 785 MHz
Table 6. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values -- 785 MHz
Part Balun 1, 2 C1, C5 C2, C6 C3, C7 C4, C8, C10, C11, C19, C20, C21, C22, C23, C27 C9 C12 C13 C14 C15, C16, C17, C18 C24, C28 C25, C26, C29, C30 L1, L2 R1, R2 PCB Balun Anaren 22 F, 25 V Tantalum Capacitors 2.2 F, 50 V Chip Capacitors 0.22 F, 100 V Chip Capacitors 36 pF Chip Capacitors 8.2 pF Chip Capacitor 0.6-4.5 pF Variable Capacitor 3.6 pF Chip Capacitor 10 pF Chip Capacitor 5.1 pF Chip Capacitors 0.022 F, 100 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors Inductors 3 Turn 1000 , 1/4 W Chip Resistors CuClad, 0.030, r = 2.55 Description 3A412 TPSD226M025R0200 C1825C225J5RAC-TU C1210C224K1RAC-TU ATC100B360JT500XT ATC100B8R2CT500XT 27271SL ATC100B3R6CT500XT ATC100B100JT500XT ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26-RH GA3094-ALC CRCW12061K00FKEA 250GX-0300-55-22 Manufacturer Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC ATC ATC Kemet Multicomp Coilcraft Vishay Arlon
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 9
C30
C27
C28
TYPICAL CHARACTERISTICS -- 785 MHZ
20.5 VDD = 50 Vdc 20 I = 150 mA DQ 19.5 f = 785 MHz Pulse Width = 128 sec 19 Duty Cycle = 10% 18.5 18 17.5 17 16.5 16 15.5 10 100 1000 60 55 D, DRAIN EFFICIENCY (%) 50 45 Gps D 40 35 30 25 20 15 10 3000
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PULSED
Figure 15. Pulsed Power Gain and Drain Efficiency versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6 10 RF Device Data Freescale Semiconductor
Zo = 5
Zload
f = 785 MHz
f = 785 MHz
Zsource
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 785 Zsource W 1.54 - j0.46 Zload W 2.79 + j1.10
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 16. Series Equivalent Source and Load Impedance -- 785 MHz
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 11
C1 C3 C2 C4 BALUN 1
MRF6VP121KH Rev. 2 C22 C21
C23
BALUN 2
R1 C12 C29 CUT OUT AREA
C13 C16 C15
L1 C17 C18 C19 C20
C10 C11
C9
R2 C8 C6 C7
C14
L2
C5
C27 C28
Figure 17. MRF6VP121KHR6(HSR6) Test Circuit Component Layout -- 1090 MHz
Table 7. MRF6VP121KHR6(HSR6) Test Circuit Component Designations and Values -- 1090 MHz
Part Balun 1, 2 C1, C5 C2, C6 C3, C7 C4, C8, C17, C18, C19, C20, C21, C25 C9 C12, C16 C10, C11, C13, C14, C15, C29 C22, C26 C23, C24, C27, C28 L1, L2 R1, R2 PCB Balun Anaren 22 F, 25 V Tantalum Capacitors 2.2 F, 50 V 1825 Chip Capacitors 0.22 F, 100 V Chip Capacitors 36 pF Chip Capacitors 1.0 pF Chip Capacitor 0.8-8.0 pF Variable Capacitors 5.1 pF Chip Capacitors 0.022 F, 100 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors Inductors 3 Turn 1000 , 1/4 W Chip Resistors CuClad, 0.030, r = 2.55 Description 3A412 TPSD226M025R0200 C1825C225J5RAC-TU C1210C224K1RAC-TU ATC100B360JT500XT ATC100B1R0BT500XT 27291SL ATC100B5R1CT500XT C1825C223K1GAC MCGPR63V477M13X26-RH GA3094-ALC CRCW12061K00FKEA 250GX-0300-55-22 Manufacturer Part Number Anaren AVX Kemet Kemet ATC ATC Johanson ATC Kemet Multicomp Coilcraft Vishay Arlon
MRF6VP121KHR6 MRF6VP121KHSR6 12 RF Device Data Freescale Semiconductor
-
C25 C26
-
C24
TYPICAL CHARACTERISTICS -- 1090 MHZ
22 VDD = 50 Vdc I = 150 mA 21 DQ f = 1090 MHz Pulse Width = 128 sec 20 Duty Cycle = 10% Gps 19 D 18 17 16 10 20 10 0 3000 30 60 50 40 D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
100
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 18. Pulsed Power Gain and Drain Efficiency versus Output Power
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 13
Zo = 5
f = 1090 MHz f = 1090 MHz Zload Zsource
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 1090 Zsource W 2.98 + j3.68 Zload W 1.51 + j2.02
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 19. Series Equivalent Source and Load Impedance -- 1090 MHz
MRF6VP121KHR6 MRF6VP121KHSR6 14 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 15
MRF6VP121KHR6 MRF6VP121KHSR6 16 RF Device Data Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 17
MRF6VP121KHR6 MRF6VP121KHSR6 18 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date June 2009 June 2009 * Initial Release of Data Sheet * Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3 * Added Figs. 13 and 16, Test Circuit Component Layout - 785 MHz and 1090 MHz, and Tables 6 and 7, Test Circuit Component Designations and Values - 785 MHz and 1090 MHz, p. 9, 12 * Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power - 785 MHz and 1090 MHz, p. 10, 13 * Added Figs. 15 and 18, Series Equivalent Source and Load Impedance - 785 MHz and 1090 MHz, p. 11, 14 2 Dec. 2009 * Added thermal data for 1030 MHz Mode-S application to Table 2, Thermal Characteristics, reporting of pulsed thermal data now shown using the ZJC symbol, p. 2 * Added Typical Performances table for 1030 MHz Mode-S application, p. 3 * Added Fig. 12, MTTF versus Junction Temperature - 1030 MHz Mode-S, p. 7 Description
MRF6VP121KHR6 MRF6VP121KHSR6 RF Device Data Freescale Semiconductor 19
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MRF6VP121KHR6 MRF6VP121KHSR6
Document Number: MRF6VP121KH Rev. 20 2, 12/2009
RF Device Data Freescale Semiconductor

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